Cargando…
Ultrafast 27 GHz cutoff frequency in vertical WSe(2) Schottky diodes with extremely low contact resistance
Ultra-thin two-dimensional semiconducting crystals in their monolayer and few-layer forms show promising aspects in nanoelectronic applications. However, the ultra-thin nature of two-dimensional crystals inevitably results in high contact resistance from limited channel/contact volume as well as dev...
Autores principales: | Yang, Sung Jin, Park, Kyu-Tae, Im, Jaeho, Hong, Sungjae, Lee, Yangjin, Min, Byung-Wook, Kim, Kwanpyo, Im, Seongil |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7101435/ https://www.ncbi.nlm.nih.gov/pubmed/32221285 http://dx.doi.org/10.1038/s41467-020-15419-1 |
Ejemplares similares
-
Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning
por: Hong, Sungjae, et al.
Publicado: (2023) -
Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
por: Yoon, Hyong Seo, et al.
Publicado: (2015) -
Ultimate limit in size and performance of WSe(2) vertical diodes
por: Nazir, Ghazanfar, et al.
Publicado: (2018) -
120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode
por: Liu, Honghui, et al.
Publicado: (2022) -
A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes
por: Wang, Li, et al.
Publicado: (2023)