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Ultrafast electron imaging of surface charge carrier dynamics at low voltage
The performance of optoelectronic devices strongly depends on charge carrier dynamics on top of surfaces of the absorber layers. Unfortunately, this information cannot be selectively probed using conventional ultrafast laser spectroscopic methods, due to the large penetration depth (tens of nm to μm...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Crystallographic Association
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7105398/ https://www.ncbi.nlm.nih.gov/pubmed/32266302 http://dx.doi.org/10.1063/4.0000007 |