Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlO(x) Interfacial Layer in a-CO(x)-Based Conductive Bridge Random Access Memory

[Image: see text] The Cu migration is controlled by using an optimized AlO(x) interfacial layer, and effects on resistive switching performance, artificial synapse, and human saliva detection in an amorphous-oxygenated-carbon (a-CO(x))-based CBRAM platform have been investigated for the first time. The 4 nm-thick AlO(x) layer in the Cu/AlO(x)/a-CO(x)/TiN(x)O(y)/TiN structure shows consecutive >2000 DC switching, tight distribution of SET/RESET voltages, a long program/erase (P/E) endurance of >10(9) cycles at a low operation current of 300 μA, and artificial synaptic characteristics under a small pulse width of 100 ns. After a P/E endurance of >10(8) cycles, the Cu migration is observed by both ex situ high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy mapping images. Furthermore, the optimized Cu/AlO(x)/a-CO(x)/TiN(x)O(y)/TiN CBRAM detects glucose with a low concentration of 1 pM, and real-time measurement of human saliva with a small sample volume of 1 μL is also detected repeatedly in vitro. This is owing to oxidation–reduction of Cu electrode, and the switching mechanism is explored. Therefore, this CBRAM device is beneficial for future artificial intelligence application.