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Semiconductor-nanoantenna-assisted solar absorber for ultra-broadband light trapping

Light trapping is an important performance of ultra-thin solar cells because it cannot only increase the optical absorption in the photoactive region but it also allows for the efficient absorption with very little materials. Semiconductor-nanoantenna has the ability to enhance light trapping and ra...

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Detalles Bibliográficos
Autores principales: Li, Yuyin, Liu, Zhengqi, Pan, Pingping, Liu, Xiaoshan, Fu, Guolan, Liu, Zhongmin, Luo, Haimei, Liu, Guiqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7142205/
https://www.ncbi.nlm.nih.gov/pubmed/32270307
http://dx.doi.org/10.1186/s11671-020-03311-2
Descripción
Sumario:Light trapping is an important performance of ultra-thin solar cells because it cannot only increase the optical absorption in the photoactive region but it also allows for the efficient absorption with very little materials. Semiconductor-nanoantenna has the ability to enhance light trapping and raise the transfer efficiency of solar energy. In this work, we present a solar absorber based on the gallium arsenide (GaAs) nanoantennas. Near-perfect light absorption (above 90%) is achieved in the wavelength which ranges from 468 to 2870 nm, showing an ultra-broadband and near-unity light trapping for the sun’s radiation. A high short-circuit current density up to 61.947 mA/cm(2) is obtained. Moreover, the solar absorber is with good structural stability and high temperature tolerance. These offer new perspectives for achieving ultra-compact efficient photovoltaic cells and thermal emitters.