Cargando…
Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes
The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C(2+) and 650 keV N(2+) ions in the fluence range of 1 × 10(13) to 1 × 10(15) ions cm...
Autores principales: | Kumar, Santosh, Zhang, Xiang, Mariswamy, Vinay Kumar, Reddy, Varra Rajagopal, Kandasami, Asokan, Nimmala, Arun, Rao, S V S Nageswara, Tang, Jue, Ramakrishnna, Seeram, Sannathammegowda, Krishnaveni |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7142408/ https://www.ncbi.nlm.nih.gov/pubmed/32183031 http://dx.doi.org/10.3390/ma13061299 |
Ejemplares similares
-
Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
por: Sandupatla, Abhinay, et al.
Publicado: (2020) -
Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
por: Zhang, Haitao, et al.
Publicado: (2021) -
Nanoscale High-Tc YBCO/GaN Super-Schottky Diode
por: Panna, Dmitry, et al.
Publicado: (2018) -
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
por: Gu, Hong, et al.
Publicado: (2019) -
X-ray detection with zinc-blende (cubic) GaN Schottky diodes
por: Gohil, T., et al.
Publicado: (2016)