Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-...

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Detalles Bibliográficos
Autores principales: Li, Ziyuan, Allen, Jeffery, Allen, Monica, Tan, Hark Hoe, Jagadish, Chennupati, Fu, Lan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7142779/
https://www.ncbi.nlm.nih.gov/pubmed/32204482
http://dx.doi.org/10.3390/ma13061400
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author Li, Ziyuan
Allen, Jeffery
Allen, Monica
Tan, Hark Hoe
Jagadish, Chennupati
Fu, Lan
author_facet Li, Ziyuan
Allen, Jeffery
Allen, Monica
Tan, Hark Hoe
Jagadish, Chennupati
Fu, Lan
author_sort Li, Ziyuan
collection PubMed
description Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.
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spelling pubmed-71427792020-04-14 Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors Li, Ziyuan Allen, Jeffery Allen, Monica Tan, Hark Hoe Jagadish, Chennupati Fu, Lan Materials (Basel) Review Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives. MDPI 2020-03-19 /pmc/articles/PMC7142779/ /pubmed/32204482 http://dx.doi.org/10.3390/ma13061400 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Li, Ziyuan
Allen, Jeffery
Allen, Monica
Tan, Hark Hoe
Jagadish, Chennupati
Fu, Lan
Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
title Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
title_full Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
title_fullStr Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
title_full_unstemmed Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
title_short Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
title_sort review on iii-v semiconductor single nanowire-based room temperature infrared photodetectors
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7142779/
https://www.ncbi.nlm.nih.gov/pubmed/32204482
http://dx.doi.org/10.3390/ma13061400
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