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Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect

Six permalloy (Py) half-rings with finite-size from 120 nm to 360 nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistance (AMR). The number of switching jumps in the AMR loops, from zero to five, varied w...

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Detalles Bibliográficos
Autores principales: Wu, Cheng-Yi, Yen, Shiow-Kang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7143246/
https://www.ncbi.nlm.nih.gov/pubmed/32204309
http://dx.doi.org/10.3390/ma13061384
_version_ 1783519569327947776
author Wu, Cheng-Yi
Yen, Shiow-Kang
author_facet Wu, Cheng-Yi
Yen, Shiow-Kang
author_sort Wu, Cheng-Yi
collection PubMed
description Six permalloy (Py) half-rings with finite-size from 120 nm to 360 nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistance (AMR). The number of switching jumps in the AMR loops, from zero to five, varied with the longitudinal applied field. These discrete jumps resulted from domain wall (DW) nucleating and depinning on the corners. The larger external field had a fewer number of jumps in the magnetoresistance (MR) curve. This reproducible and particular response of the domain wall device in the half-ring wires pattern might be one of the new promising magnetoelectronic devices.
format Online
Article
Text
id pubmed-7143246
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-71432462020-04-14 Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect Wu, Cheng-Yi Yen, Shiow-Kang Materials (Basel) Article Six permalloy (Py) half-rings with finite-size from 120 nm to 360 nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistance (AMR). The number of switching jumps in the AMR loops, from zero to five, varied with the longitudinal applied field. These discrete jumps resulted from domain wall (DW) nucleating and depinning on the corners. The larger external field had a fewer number of jumps in the magnetoresistance (MR) curve. This reproducible and particular response of the domain wall device in the half-ring wires pattern might be one of the new promising magnetoelectronic devices. MDPI 2020-03-19 /pmc/articles/PMC7143246/ /pubmed/32204309 http://dx.doi.org/10.3390/ma13061384 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wu, Cheng-Yi
Yen, Shiow-Kang
Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect
title Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect
title_full Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect
title_fullStr Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect
title_full_unstemmed Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect
title_short Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect
title_sort multiple transitions in permalloy half-ring wires with finite-size effect
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7143246/
https://www.ncbi.nlm.nih.gov/pubmed/32204309
http://dx.doi.org/10.3390/ma13061384
work_keys_str_mv AT wuchengyi multipletransitionsinpermalloyhalfringwireswithfinitesizeeffect
AT yenshiowkang multipletransitionsinpermalloyhalfringwireswithfinitesizeeffect