A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)

[Image: see text] A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs) has been developed, leading to the demonstration of ultrasmall, ultraefficient, and ultracompact green μLEDs with a dimension of 3.6 μm and an interpitch of 2 μm. The appro...

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Detalles Bibliográficos
Autores principales: Bai, Jie, Cai, Yuefei, Feng, Peng, Fletcher, Peter, Zhao, Xuanming, Zhu, Chenqi, Wang, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7147254/
https://www.ncbi.nlm.nih.gov/pubmed/32296730
http://dx.doi.org/10.1021/acsphotonics.9b01351

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7147254/
https://www.ncbi.nlm.nih.gov/pubmed/32296730
http://dx.doi.org/10.1021/acsphotonics.9b01351

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