Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etchin...

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Detalles Bibliográficos
Autores principales: Naffeti, Mariem, Postigo, Pablo Aitor, Chtourou, Radhouane, Zaïbi, Mohamed Ali
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7152846/
https://www.ncbi.nlm.nih.gov/pubmed/32106503
http://dx.doi.org/10.3390/nano10030404

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7152846/
https://www.ncbi.nlm.nih.gov/pubmed/32106503
http://dx.doi.org/10.3390/nano10030404

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