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Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires
In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etchin...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7152846/ https://www.ncbi.nlm.nih.gov/pubmed/32106503 http://dx.doi.org/10.3390/nano10030404 |