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Effects of Annealing on Characteristics of Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells

This paper presents new photovoltaic solar cells with Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)(MAPbI(3))/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer...

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Autores principales: Tseng, Chzu-Chiang, Wu, Gwomei, Chang, Liann-Be, Jeng, Ming-Jer, Feng, Wu-Shiung, Chen, Dave W., Chen, Lung-Chien, Lee, Kuan-Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153255/
https://www.ncbi.nlm.nih.gov/pubmed/32183108
http://dx.doi.org/10.3390/nano10030521
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author Tseng, Chzu-Chiang
Wu, Gwomei
Chang, Liann-Be
Jeng, Ming-Jer
Feng, Wu-Shiung
Chen, Dave W.
Chen, Lung-Chien
Lee, Kuan-Lin
author_facet Tseng, Chzu-Chiang
Wu, Gwomei
Chang, Liann-Be
Jeng, Ming-Jer
Feng, Wu-Shiung
Chen, Dave W.
Chen, Lung-Chien
Lee, Kuan-Lin
author_sort Tseng, Chzu-Chiang
collection PubMed
description This paper presents new photovoltaic solar cells with Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)(MAPbI(3))/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu(2)ZnSnSe(4), MAPbI(3) perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI(3) perovskite film was deposited on Cu(2)ZnSnSe(4) hole-transporting layer that has been annealed at different temperatures. TheseCu(2)ZnSnSe(4) filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu(2)ZnSnSe(4) hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650 °C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm(2), and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power P(max) was as good as 1.74 mW and the device series-resistance was 17.1 Ω.
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spelling pubmed-71532552020-04-20 Effects of Annealing on Characteristics of Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells Tseng, Chzu-Chiang Wu, Gwomei Chang, Liann-Be Jeng, Ming-Jer Feng, Wu-Shiung Chen, Dave W. Chen, Lung-Chien Lee, Kuan-Lin Nanomaterials (Basel) Article This paper presents new photovoltaic solar cells with Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)(MAPbI(3))/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu(2)ZnSnSe(4), MAPbI(3) perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI(3) perovskite film was deposited on Cu(2)ZnSnSe(4) hole-transporting layer that has been annealed at different temperatures. TheseCu(2)ZnSnSe(4) filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu(2)ZnSnSe(4) hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650 °C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm(2), and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power P(max) was as good as 1.74 mW and the device series-resistance was 17.1 Ω. MDPI 2020-03-13 /pmc/articles/PMC7153255/ /pubmed/32183108 http://dx.doi.org/10.3390/nano10030521 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Tseng, Chzu-Chiang
Wu, Gwomei
Chang, Liann-Be
Jeng, Ming-Jer
Feng, Wu-Shiung
Chen, Dave W.
Chen, Lung-Chien
Lee, Kuan-Lin
Effects of Annealing on Characteristics of Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells
title Effects of Annealing on Characteristics of Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells
title_full Effects of Annealing on Characteristics of Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells
title_fullStr Effects of Annealing on Characteristics of Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells
title_full_unstemmed Effects of Annealing on Characteristics of Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells
title_short Effects of Annealing on Characteristics of Cu(2)ZnSnSe(4)/CH(3)NH(3)PbI(3)/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells
title_sort effects of annealing on characteristics of cu(2)znsnse(4)/ch(3)nh(3)pbi(3)/zns/izo nanostructures for enhanced photovoltaic solar cells
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153255/
https://www.ncbi.nlm.nih.gov/pubmed/32183108
http://dx.doi.org/10.3390/nano10030521
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