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Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene

The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mec...

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Autores principales: Müller, Martin, Bouša, Milan, Hájková, Zdeňka, Ledinský, Martin, Fejfar, Antonín, Drogowska-Horná, Karolina, Kalbáč, Martin, Frank, Otakar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153506/
https://www.ncbi.nlm.nih.gov/pubmed/32213885
http://dx.doi.org/10.3390/nano10030589
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author Müller, Martin
Bouša, Milan
Hájková, Zdeňka
Ledinský, Martin
Fejfar, Antonín
Drogowska-Horná, Karolina
Kalbáč, Martin
Frank, Otakar
author_facet Müller, Martin
Bouša, Milan
Hájková, Zdeňka
Ledinský, Martin
Fejfar, Antonín
Drogowska-Horná, Karolina
Kalbáč, Martin
Frank, Otakar
author_sort Müller, Martin
collection PubMed
description The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult—as is the case of graphene on noncatalytic substrates such as Si—inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 °C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics.
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spelling pubmed-71535062020-04-20 Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene Müller, Martin Bouša, Milan Hájková, Zdeňka Ledinský, Martin Fejfar, Antonín Drogowska-Horná, Karolina Kalbáč, Martin Frank, Otakar Nanomaterials (Basel) Article The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult—as is the case of graphene on noncatalytic substrates such as Si—inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 °C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics. MDPI 2020-03-24 /pmc/articles/PMC7153506/ /pubmed/32213885 http://dx.doi.org/10.3390/nano10030589 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Müller, Martin
Bouša, Milan
Hájková, Zdeňka
Ledinský, Martin
Fejfar, Antonín
Drogowska-Horná, Karolina
Kalbáč, Martin
Frank, Otakar
Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene
title Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene
title_full Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene
title_fullStr Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene
title_full_unstemmed Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene
title_short Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene
title_sort transferless inverted graphene/silicon heterostructures prepared by plasma-enhanced chemical vapor deposition of amorphous silicon on cvd graphene
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153506/
https://www.ncbi.nlm.nih.gov/pubmed/32213885
http://dx.doi.org/10.3390/nano10030589
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