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Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation

In this paper, a high-efficiency terahertz amplitude modulation device based on a field-effect transistor has been proposed. The polarization insensitive modulator is designed to achieve a maximum experimental modulation depth of about 53% within 5 V of gate voltages using monolayer graphene. Moreov...

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Detalles Bibliográficos
Autores principales: Zheng, Qianying, Xia, Liangping, Tang, Linlong, Du, Chunlei, Cui, Hongliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153508/
https://www.ncbi.nlm.nih.gov/pubmed/32210123
http://dx.doi.org/10.3390/nano10030585
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author Zheng, Qianying
Xia, Liangping
Tang, Linlong
Du, Chunlei
Cui, Hongliang
author_facet Zheng, Qianying
Xia, Liangping
Tang, Linlong
Du, Chunlei
Cui, Hongliang
author_sort Zheng, Qianying
collection PubMed
description In this paper, a high-efficiency terahertz amplitude modulation device based on a field-effect transistor has been proposed. The polarization insensitive modulator is designed to achieve a maximum experimental modulation depth of about 53% within 5 V of gate voltages using monolayer graphene. Moreover, the manufacturing processes are inexpensive. Two methods are adopted to improve modulation performance. For one thing, the metal metamaterial designed can effectively enhance the electromagnetic field near single-layer graphene and therefore greatly promote the graphene’s modulation ability in terahertz. For another, polyethylene oxide-based electrolytes (PEO:LiClO(4)) acts as a high-capacity donor, which makes it possible to dope single-layer graphene at a relatively low voltage.
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spelling pubmed-71535082020-04-20 Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation Zheng, Qianying Xia, Liangping Tang, Linlong Du, Chunlei Cui, Hongliang Nanomaterials (Basel) Article In this paper, a high-efficiency terahertz amplitude modulation device based on a field-effect transistor has been proposed. The polarization insensitive modulator is designed to achieve a maximum experimental modulation depth of about 53% within 5 V of gate voltages using monolayer graphene. Moreover, the manufacturing processes are inexpensive. Two methods are adopted to improve modulation performance. For one thing, the metal metamaterial designed can effectively enhance the electromagnetic field near single-layer graphene and therefore greatly promote the graphene’s modulation ability in terahertz. For another, polyethylene oxide-based electrolytes (PEO:LiClO(4)) acts as a high-capacity donor, which makes it possible to dope single-layer graphene at a relatively low voltage. MDPI 2020-03-23 /pmc/articles/PMC7153508/ /pubmed/32210123 http://dx.doi.org/10.3390/nano10030585 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zheng, Qianying
Xia, Liangping
Tang, Linlong
Du, Chunlei
Cui, Hongliang
Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation
title Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation
title_full Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation
title_fullStr Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation
title_full_unstemmed Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation
title_short Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation
title_sort low voltage graphene-based amplitude modulator for high efficiency terahertz modulation
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153508/
https://www.ncbi.nlm.nih.gov/pubmed/32210123
http://dx.doi.org/10.3390/nano10030585
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