Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation

In this paper, a high-efficiency terahertz amplitude modulation device based on a field-effect transistor has been proposed. The polarization insensitive modulator is designed to achieve a maximum experimental modulation depth of about 53% within 5 V of gate voltages using monolayer graphene. Moreov...

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Detalles Bibliográficos
Autores principales: Zheng, Qianying, Xia, Liangping, Tang, Linlong, Du, Chunlei, Cui, Hongliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153508/
https://www.ncbi.nlm.nih.gov/pubmed/32210123
http://dx.doi.org/10.3390/nano10030585

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153508/
https://www.ncbi.nlm.nih.gov/pubmed/32210123
http://dx.doi.org/10.3390/nano10030585

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