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Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation
In this paper, a high-efficiency terahertz amplitude modulation device based on a field-effect transistor has been proposed. The polarization insensitive modulator is designed to achieve a maximum experimental modulation depth of about 53% within 5 V of gate voltages using monolayer graphene. Moreov...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153508/ https://www.ncbi.nlm.nih.gov/pubmed/32210123 http://dx.doi.org/10.3390/nano10030585 |