Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO(x)/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the...

Descripción completa

Detalles Bibliográficos
Autores principales: Wu, Lei, Liu, Hongxia, Lin, Jinfu, Wang, Shulong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153612/
https://www.ncbi.nlm.nih.gov/pubmed/32143299
http://dx.doi.org/10.3390/nano10030457
Descripción
Sumario:A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO(x)/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 10(5) s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.

Ejemplares similares