Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO(x)/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the...

Descripción completa

Detalles Bibliográficos
Autores principales: Wu, Lei, Liu, Hongxia, Lin, Jinfu, Wang, Shulong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153612/
https://www.ncbi.nlm.nih.gov/pubmed/32143299
http://dx.doi.org/10.3390/nano10030457
_version_ 1783521682468634624
author Wu, Lei
Liu, Hongxia
Lin, Jinfu
Wang, Shulong
author_facet Wu, Lei
Liu, Hongxia
Lin, Jinfu
Wang, Shulong
author_sort Wu, Lei
collection PubMed
description A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO(x)/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 10(5) s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.
format Online
Article
Text
id pubmed-7153612
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-71536122020-04-20 Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing Wu, Lei Liu, Hongxia Lin, Jinfu Wang, Shulong Nanomaterials (Basel) Article A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO(x)/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 10(5) s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed. MDPI 2020-03-04 /pmc/articles/PMC7153612/ /pubmed/32143299 http://dx.doi.org/10.3390/nano10030457 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wu, Lei
Liu, Hongxia
Lin, Jinfu
Wang, Shulong
Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing
title Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing
title_full Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing
title_fullStr Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing
title_full_unstemmed Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing
title_short Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing
title_sort self-compliance and high performance pt/hfo(x)/ti rram achieved through annealing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153612/
https://www.ncbi.nlm.nih.gov/pubmed/32143299
http://dx.doi.org/10.3390/nano10030457
work_keys_str_mv AT wulei selfcomplianceandhighperformancepthfoxtirramachievedthroughannealing
AT liuhongxia selfcomplianceandhighperformancepthfoxtirramachievedthroughannealing
AT linjinfu selfcomplianceandhighperformancepthfoxtirramachievedthroughannealing
AT wangshulong selfcomplianceandhighperformancepthfoxtirramachievedthroughannealing

Ejemplares similares