Double etched porous silicon nanowire arrays for impedance sensing of influenza viruses

We report new sensing element based on double-etched porous silicon (DEPSi) for sensitive detection of influenza viruses (H1N1). The proposed structure provided efficient penetration of virions into sensitive layer and trapping of them. Adsorption of the viruses led to significant shift of resonant...

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Detalles Bibliográficos
Autores principales: Gongalsky, M.B., Tsurikova, U.A., Samsonova, J.V., Gvindzhiliiia, G.Z., Gonchar, K.A., Saushkin, N. Yu, Kudryavtsev, A.A., Kropotkina, E.A., Gambaryan, A.S., Osminkina, L.A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Author(s). Published by Elsevier B.V. 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7156141/
http://dx.doi.org/10.1016/j.rinma.2020.100084
Descripción
Sumario:We report new sensing element based on double-etched porous silicon (DEPSi) for sensitive detection of influenza viruses (H1N1). The proposed structure provided efficient penetration of virions into sensitive layer and trapping of them. Adsorption of the viruses led to significant shift of resonant frequency of DEPSi coupled with a coil, measured by impedance spectrometer. The detection limit of virions was lower than 100 TCID(50). The results can be used for invention of H1N1 sensor, which provide rapid, label-free and low-cost detection of influenza.

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