High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects,...

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Detalles Bibliográficos
Autores principales: Bietti, Sergio, Basset, Francesco Basso, Tuktamyshev, Artur, Bonera, Emiliano, Fedorov, Alexey, Sanguinetti, Stefano
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7162903/
https://www.ncbi.nlm.nih.gov/pubmed/32300114
http://dx.doi.org/10.1038/s41598-020-62248-9
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author Bietti, Sergio
Basset, Francesco Basso
Tuktamyshev, Artur
Bonera, Emiliano
Fedorov, Alexey
Sanguinetti, Stefano
author_facet Bietti, Sergio
Basset, Francesco Basso
Tuktamyshev, Artur
Bonera, Emiliano
Fedorov, Alexey
Sanguinetti, Stefano
author_sort Bietti, Sergio
collection PubMed
description We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self–assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modeled.
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spelling pubmed-71629032020-04-22 High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots Bietti, Sergio Basset, Francesco Basso Tuktamyshev, Artur Bonera, Emiliano Fedorov, Alexey Sanguinetti, Stefano Sci Rep Article We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self–assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modeled. Nature Publishing Group UK 2020-04-16 /pmc/articles/PMC7162903/ /pubmed/32300114 http://dx.doi.org/10.1038/s41598-020-62248-9 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Bietti, Sergio
Basset, Francesco Basso
Tuktamyshev, Artur
Bonera, Emiliano
Fedorov, Alexey
Sanguinetti, Stefano
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
title High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
title_full High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
title_fullStr High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
title_full_unstemmed High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
title_short High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
title_sort high–temperature droplet epitaxy of symmetric gaas/algaas quantum dots
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7162903/
https://www.ncbi.nlm.nih.gov/pubmed/32300114
http://dx.doi.org/10.1038/s41598-020-62248-9
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