High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects,...

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Detalles Bibliográficos
Autores principales: Bietti, Sergio, Basset, Francesco Basso, Tuktamyshev, Artur, Bonera, Emiliano, Fedorov, Alexey, Sanguinetti, Stefano
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7162903/
https://www.ncbi.nlm.nih.gov/pubmed/32300114
http://dx.doi.org/10.1038/s41598-020-62248-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7162903/
https://www.ncbi.nlm.nih.gov/pubmed/32300114
http://dx.doi.org/10.1038/s41598-020-62248-9

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