Enhancement of silicon modulating properties in the THz range by YAG-Ce coating

Y(3)Al(5-x)Ga(x)O(12):Ce(3+),V(3+) (YAG:Ce) has excellent chemical stability and unprecedented luminous efficiency. Its strong photoresponsive property is thoroughly utilized in designing excellent optical information storage device. Here, the remarkable photoconductivity of YAG:Ce is exploited to d...

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Detalles Bibliográficos
Autores principales: Li, Jiu-sheng, Hu, Mu-shu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7171083/
https://www.ncbi.nlm.nih.gov/pubmed/32313115
http://dx.doi.org/10.1038/s41598-020-63386-w
Descripción
Sumario:Y(3)Al(5-x)Ga(x)O(12):Ce(3+),V(3+) (YAG:Ce) has excellent chemical stability and unprecedented luminous efficiency. Its strong photoresponsive property is thoroughly utilized in designing excellent optical information storage device. Here, the remarkable photoconductivity of YAG:Ce is exploited to demonstrate a hybrid YAG:Ce-silicon device that shows high speed terahertz wave spatial modulation. A wide terahertz spectra modulation is observed under different pump powers in frequency range from 0.2 to 1.8 THz. Furthermore, a dynamic control of the terahertz wave intensity is also observed in the transmission system. The modulation speed and depth of the device is measured to be 4 MHz (vs 0.2 kHz)and 83.8%(vs50%) for bare silicon, respectively. The terahertz transmission spectra exhibits highly efficiency terahertz modulation by optically pumping a YAG:Ce film on silicon with low optical pump fluence.

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