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Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15...

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Autores principales: Thuau, Damien, Begley, Katherine, Dilmurat, Rishat, Ablat, Abduleziz, Wantz, Guillaume, Ayela, Cédric, Abbas, Mamatimin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7177620/
https://www.ncbi.nlm.nih.gov/pubmed/32235524
http://dx.doi.org/10.3390/ma13071583
_version_ 1783525261409517568
author Thuau, Damien
Begley, Katherine
Dilmurat, Rishat
Ablat, Abduleziz
Wantz, Guillaume
Ayela, Cédric
Abbas, Mamatimin
author_facet Thuau, Damien
Begley, Katherine
Dilmurat, Rishat
Ablat, Abduleziz
Wantz, Guillaume
Ayela, Cédric
Abbas, Mamatimin
author_sort Thuau, Damien
collection PubMed
description Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.
format Online
Article
Text
id pubmed-7177620
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-71776202020-04-28 Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors Thuau, Damien Begley, Katherine Dilmurat, Rishat Ablat, Abduleziz Wantz, Guillaume Ayela, Cédric Abbas, Mamatimin Materials (Basel) Letter Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed. MDPI 2020-03-30 /pmc/articles/PMC7177620/ /pubmed/32235524 http://dx.doi.org/10.3390/ma13071583 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Letter
Thuau, Damien
Begley, Katherine
Dilmurat, Rishat
Ablat, Abduleziz
Wantz, Guillaume
Ayela, Cédric
Abbas, Mamatimin
Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors
title Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors
title_full Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors
title_fullStr Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors
title_full_unstemmed Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors
title_short Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors
title_sort exploring the critical thickness of organic semiconductor layer for enhanced piezoresistive sensitivity in field-effect transistor sensors
topic Letter
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7177620/
https://www.ncbi.nlm.nih.gov/pubmed/32235524
http://dx.doi.org/10.3390/ma13071583
work_keys_str_mv AT thuaudamien exploringthecriticalthicknessoforganicsemiconductorlayerforenhancedpiezoresistivesensitivityinfieldeffecttransistorsensors
AT begleykatherine exploringthecriticalthicknessoforganicsemiconductorlayerforenhancedpiezoresistivesensitivityinfieldeffecttransistorsensors
AT dilmuratrishat exploringthecriticalthicknessoforganicsemiconductorlayerforenhancedpiezoresistivesensitivityinfieldeffecttransistorsensors
AT ablatabduleziz exploringthecriticalthicknessoforganicsemiconductorlayerforenhancedpiezoresistivesensitivityinfieldeffecttransistorsensors
AT wantzguillaume exploringthecriticalthicknessoforganicsemiconductorlayerforenhancedpiezoresistivesensitivityinfieldeffecttransistorsensors
AT ayelacedric exploringthecriticalthicknessoforganicsemiconductorlayerforenhancedpiezoresistivesensitivityinfieldeffecttransistorsensors
AT abbasmamatimin exploringthecriticalthicknessoforganicsemiconductorlayerforenhancedpiezoresistivesensitivityinfieldeffecttransistorsensors