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A Poly Resistor Based Time Domain CMOS Temperature Sensor with 9b SAR and Fine Delay Line
This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CM...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7180752/ https://www.ncbi.nlm.nih.gov/pubmed/32268513 http://dx.doi.org/10.3390/s20072053 |