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Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials
Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
AAAS
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7193307/ https://www.ncbi.nlm.nih.gov/pubmed/32395718 http://dx.doi.org/10.34133/2020/6375171 |
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author | Dylla, Maxwell T. Dunn, Alexander Anand, Shashwat Jain, Anubhav Snyder, G. Jeffrey |
author_facet | Dylla, Maxwell T. Dunn, Alexander Anand, Shashwat Jain, Anubhav Snyder, G. Jeffrey |
author_sort | Dylla, Maxwell T. |
collection | PubMed |
description | Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is not clear how the chemical composition affects the electronic structure. While all the n-type electronic structures have their conduction band minimum at either the Γ- or X-point, there is more diversity in the p-type electronic structures, and the valence band maximum can be at either the Γ-, L-, or W-point. Here, we use high throughput computation and machine learning to compare the valence bands of known half-Heusler compounds and discover new chemical guidelines for promoting the highly degenerate W-point to the valence band maximum. We do this by constructing an “orbital phase diagram” to cluster the variety of electronic structures expressed by these phases into groups, based on the atomic orbitals that contribute most to their valence bands. Then, with the aid of machine learning, we develop new chemical rules that predict the location of the valence band maximum in each of the phases. These rules can be used to engineer band structures with band convergence and high valley degeneracy. |
format | Online Article Text |
id | pubmed-7193307 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | AAAS |
record_format | MEDLINE/PubMed |
spelling | pubmed-71933072020-05-11 Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials Dylla, Maxwell T. Dunn, Alexander Anand, Shashwat Jain, Anubhav Snyder, G. Jeffrey Research (Wash D C) Research Article Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is not clear how the chemical composition affects the electronic structure. While all the n-type electronic structures have their conduction band minimum at either the Γ- or X-point, there is more diversity in the p-type electronic structures, and the valence band maximum can be at either the Γ-, L-, or W-point. Here, we use high throughput computation and machine learning to compare the valence bands of known half-Heusler compounds and discover new chemical guidelines for promoting the highly degenerate W-point to the valence band maximum. We do this by constructing an “orbital phase diagram” to cluster the variety of electronic structures expressed by these phases into groups, based on the atomic orbitals that contribute most to their valence bands. Then, with the aid of machine learning, we develop new chemical rules that predict the location of the valence band maximum in each of the phases. These rules can be used to engineer band structures with band convergence and high valley degeneracy. AAAS 2020-04-22 /pmc/articles/PMC7193307/ /pubmed/32395718 http://dx.doi.org/10.34133/2020/6375171 Text en Copyright © 2020 Maxwell T. Dylla et al. http://creativecommons.org/licenses/by/4.0/ Exclusive Licensee Science and Technology Review Publishing House. Distributed under a Creative Commons Attribution License (CC BY 4.0). |
spellingShingle | Research Article Dylla, Maxwell T. Dunn, Alexander Anand, Shashwat Jain, Anubhav Snyder, G. Jeffrey Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials |
title | Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials |
title_full | Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials |
title_fullStr | Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials |
title_full_unstemmed | Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials |
title_short | Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials |
title_sort | machine learning chemical guidelines for engineering electronic structures in half-heusler thermoelectric materials |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7193307/ https://www.ncbi.nlm.nih.gov/pubmed/32395718 http://dx.doi.org/10.34133/2020/6375171 |
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