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Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials

Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is...

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Autores principales: Dylla, Maxwell T., Dunn, Alexander, Anand, Shashwat, Jain, Anubhav, Snyder, G. Jeffrey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: AAAS 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7193307/
https://www.ncbi.nlm.nih.gov/pubmed/32395718
http://dx.doi.org/10.34133/2020/6375171
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author Dylla, Maxwell T.
Dunn, Alexander
Anand, Shashwat
Jain, Anubhav
Snyder, G. Jeffrey
author_facet Dylla, Maxwell T.
Dunn, Alexander
Anand, Shashwat
Jain, Anubhav
Snyder, G. Jeffrey
author_sort Dylla, Maxwell T.
collection PubMed
description Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is not clear how the chemical composition affects the electronic structure. While all the n-type electronic structures have their conduction band minimum at either the Γ- or X-point, there is more diversity in the p-type electronic structures, and the valence band maximum can be at either the Γ-, L-, or W-point. Here, we use high throughput computation and machine learning to compare the valence bands of known half-Heusler compounds and discover new chemical guidelines for promoting the highly degenerate W-point to the valence band maximum. We do this by constructing an “orbital phase diagram” to cluster the variety of electronic structures expressed by these phases into groups, based on the atomic orbitals that contribute most to their valence bands. Then, with the aid of machine learning, we develop new chemical rules that predict the location of the valence band maximum in each of the phases. These rules can be used to engineer band structures with band convergence and high valley degeneracy.
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spelling pubmed-71933072020-05-11 Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials Dylla, Maxwell T. Dunn, Alexander Anand, Shashwat Jain, Anubhav Snyder, G. Jeffrey Research (Wash D C) Research Article Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is not clear how the chemical composition affects the electronic structure. While all the n-type electronic structures have their conduction band minimum at either the Γ- or X-point, there is more diversity in the p-type electronic structures, and the valence band maximum can be at either the Γ-, L-, or W-point. Here, we use high throughput computation and machine learning to compare the valence bands of known half-Heusler compounds and discover new chemical guidelines for promoting the highly degenerate W-point to the valence band maximum. We do this by constructing an “orbital phase diagram” to cluster the variety of electronic structures expressed by these phases into groups, based on the atomic orbitals that contribute most to their valence bands. Then, with the aid of machine learning, we develop new chemical rules that predict the location of the valence band maximum in each of the phases. These rules can be used to engineer band structures with band convergence and high valley degeneracy. AAAS 2020-04-22 /pmc/articles/PMC7193307/ /pubmed/32395718 http://dx.doi.org/10.34133/2020/6375171 Text en Copyright © 2020 Maxwell T. Dylla et al. http://creativecommons.org/licenses/by/4.0/ Exclusive Licensee Science and Technology Review Publishing House. Distributed under a Creative Commons Attribution License (CC BY 4.0).
spellingShingle Research Article
Dylla, Maxwell T.
Dunn, Alexander
Anand, Shashwat
Jain, Anubhav
Snyder, G. Jeffrey
Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials
title Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials
title_full Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials
title_fullStr Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials
title_full_unstemmed Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials
title_short Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials
title_sort machine learning chemical guidelines for engineering electronic structures in half-heusler thermoelectric materials
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7193307/
https://www.ncbi.nlm.nih.gov/pubmed/32395718
http://dx.doi.org/10.34133/2020/6375171
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