Synthesis and optoelectronic properties of Cu(3)VSe(4) nanocrystals

The ternary chalcogenide Cu(3)VSe(4) (CVSe) with sulvanite structure has been theoretically predicted to be a promising candidate for photovoltaic applications due to its suitable bandgap for solar absorption and the relatively earth-abundant elements in its composition. To realize the absorber layer via an inexpensive route, printed thin-films could be fabricated from dispersions of nano-sized Cu(3)VSe(4) precursors. Herein, cubic Cu(3)VSe(4) nanocrystals were successfully synthesized via a hot-injection method. Similar with reported Cu(3)VS(4) nanocrystals, Cu(3)VSe(4) nanocrystals with cubic structure exhibit three absorption bands in the UV-Visible range indicative of a potential intermediate bandgap existence. A thin film fabricated by depositing the nanoparticles Cu(3)VSe(4) on FTO coated glass substrate, exhibited a p-type behavior and a photocurrent of ~ 4 μA/cm(2) when measured in an electrochemical cell setting. This first demonstration of photocurrent exhibited by a CVSe nanocrystals thin film signifies a promising potential in photovoltaic applications.