Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron

A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input s...

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Detalles Bibliográficos
Autores principales: Kim, Dong Won, Yi, Woo Seok, Choi, Jin Young, Ashiba, Kei, Baek, Jong Ung, Jun, Han Sol, Kim, Jae Joon, Park, Jea Gun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2020
Materias:
Neuroscience
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7204637/
https://www.ncbi.nlm.nih.gov/pubmed/32425744
http://dx.doi.org/10.3389/fnins.2020.00309
Descripción
Sumario:A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input spike number. This behavior occurred when the spin electron directions between double Co(2)Fe(6)B(2) free and pinned layers in the p-STT-based neuron were switched from parallel to antiparallel states. In addition, a neuron circuit for integrate-and-fire operation was proposed. Finally, pattern-recognition simulation was performed for a single-layer SNN.

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