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Disorder by design: A data-driven approach to amorphous semiconductors without total-energy functionals
X-ray diffraction, Amorphous silicon, Multi-objective optimization, Monte Carlo methods. This paper addresses a difficult inverse problem that involves the reconstruction of a three-dimensional model of tetrahedral amorphous semiconductors via inversion of diffraction data. By posing the material-st...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7210951/ https://www.ncbi.nlm.nih.gov/pubmed/32385360 http://dx.doi.org/10.1038/s41598-020-64327-3 |