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Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics

Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source we...

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Autores principales: Gokhale, Vikrant J., Downey, Brian P., Katzer, D. Scott, Nepal, Neeraj, Lang, Andrew C., Stroud, Rhonda M., Meyer, David J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7210958/
https://www.ncbi.nlm.nih.gov/pubmed/32385280
http://dx.doi.org/10.1038/s41467-020-15472-w
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author Gokhale, Vikrant J.
Downey, Brian P.
Katzer, D. Scott
Nepal, Neeraj
Lang, Andrew C.
Stroud, Rhonda M.
Meyer, David J.
author_facet Gokhale, Vikrant J.
Downey, Brian P.
Katzer, D. Scott
Nepal, Neeraj
Lang, Andrew C.
Stroud, Rhonda M.
Meyer, David J.
author_sort Gokhale, Vikrant J.
collection PubMed
description Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency >99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding (f × Q) and phonon lifetimes up to 1.36 × 10(17) Hz and 500 µs respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits.
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spelling pubmed-72109582020-05-13 Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics Gokhale, Vikrant J. Downey, Brian P. Katzer, D. Scott Nepal, Neeraj Lang, Andrew C. Stroud, Rhonda M. Meyer, David J. Nat Commun Article Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency >99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding (f × Q) and phonon lifetimes up to 1.36 × 10(17) Hz and 500 µs respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits. Nature Publishing Group UK 2020-05-08 /pmc/articles/PMC7210958/ /pubmed/32385280 http://dx.doi.org/10.1038/s41467-020-15472-w Text en © This is a U.S. government work and not under copyright protection in the U.S.; foreign copyright protection may apply 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Gokhale, Vikrant J.
Downey, Brian P.
Katzer, D. Scott
Nepal, Neeraj
Lang, Andrew C.
Stroud, Rhonda M.
Meyer, David J.
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
title Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
title_full Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
title_fullStr Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
title_full_unstemmed Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
title_short Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
title_sort epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7210958/
https://www.ncbi.nlm.nih.gov/pubmed/32385280
http://dx.doi.org/10.1038/s41467-020-15472-w
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