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A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement

In this paper, an improved self-biased bandgap reference (BGR) with high power supply rejection ratio (PSRR) is presented. An operational amplifier constructing feedback loop is multiplexed with the generation of positive temperature coefficient (TC) voltage for lower power consumption, where an off...

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Detalles Bibliográficos
Autores principales: Shi, Yue, Li, Shilei, Cao, Jianwen, Zhou, Zekun, Ling, Weiwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7214604/
https://www.ncbi.nlm.nih.gov/pubmed/32394108
http://dx.doi.org/10.1186/s11671-020-03333-w
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author Shi, Yue
Li, Shilei
Cao, Jianwen
Zhou, Zekun
Ling, Weiwei
author_facet Shi, Yue
Li, Shilei
Cao, Jianwen
Zhou, Zekun
Ling, Weiwei
author_sort Shi, Yue
collection PubMed
description In this paper, an improved self-biased bandgap reference (BGR) with high power supply rejection ratio (PSRR) is presented. An operational amplifier constructing feedback loop is multiplexed with the generation of positive temperature coefficient (TC) voltage for lower power consumption, where an offset voltage is adopted to achieve proportional to absolute temperature (PTAT) voltage. With the temperature-independent reference generation, two feedback loops are realized at the same time for PSRR enhancement, which form a local negative feedback loop (LNFL) and a global self-biased loop (GSBL). The proposed BGR is implemented in a 180 nm BCD technology, whose results show that the generated reference voltage is 2.506 V, and the TC is 25 ppm/°C in the temperature range of −55 to 125 °C. The line sensitivity (LS) is 0.08 ‰/V. Without any filter capacitor, the PSRR is 76 dB at low frequencies, over 46 dB up to 1 MHz.
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spelling pubmed-72146042020-05-14 A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement Shi, Yue Li, Shilei Cao, Jianwen Zhou, Zekun Ling, Weiwei Nanoscale Res Lett Nano Express In this paper, an improved self-biased bandgap reference (BGR) with high power supply rejection ratio (PSRR) is presented. An operational amplifier constructing feedback loop is multiplexed with the generation of positive temperature coefficient (TC) voltage for lower power consumption, where an offset voltage is adopted to achieve proportional to absolute temperature (PTAT) voltage. With the temperature-independent reference generation, two feedback loops are realized at the same time for PSRR enhancement, which form a local negative feedback loop (LNFL) and a global self-biased loop (GSBL). The proposed BGR is implemented in a 180 nm BCD technology, whose results show that the generated reference voltage is 2.506 V, and the TC is 25 ppm/°C in the temperature range of −55 to 125 °C. The line sensitivity (LS) is 0.08 ‰/V. Without any filter capacitor, the PSRR is 76 dB at low frequencies, over 46 dB up to 1 MHz. Springer US 2020-05-11 /pmc/articles/PMC7214604/ /pubmed/32394108 http://dx.doi.org/10.1186/s11671-020-03333-w Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Shi, Yue
Li, Shilei
Cao, Jianwen
Zhou, Zekun
Ling, Weiwei
A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement
title A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement
title_full A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement
title_fullStr A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement
title_full_unstemmed A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement
title_short A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement
title_sort 180 nm self-biased bandgap reference with high psrr enhancement
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7214604/
https://www.ncbi.nlm.nih.gov/pubmed/32394108
http://dx.doi.org/10.1186/s11671-020-03333-w
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