Special Issue: Nanowire Field-Effect Transistor (FET)

This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief ov...

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Detalles Bibliográficos
Autores principales: Seoane, Natalia, García-Loureiro, Antonio, Kalna, Karol
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Editorial
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7215818/
https://www.ncbi.nlm.nih.gov/pubmed/32295217
http://dx.doi.org/10.3390/ma13081845
Descripción
Sumario:This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief overview of the articles’ content.

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