Preparation of Cu(3)N/MoS(2) Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance

Cu(3)N/MoS(2) heterojunction was prepared through magnetron sputtering, and its optical band gap was investigated. Results showed that the prepared Cu(3)N/MoS(2) heterojunction had a clear surface heterojunction structure, uniform surface grains, and no evident cracks. The optical band gap (1.98 eV) of Cu(3)N/MoS(2) heterojunction was obtained by analyzing the ultraviolet-visible transmission spectrum. The valence and conduction band offsets of Cu(3)N/MoS(2) heterojunction were 1.42 and 0.82 eV, respectively. The Cu(3)N film and multilayer MoS(2) formed a type-II heterojunction. After the two materials adhered to form the heterojunction, the interface electrons flowed from MoS(2) to Cu(3)N because the latter had higher Fermi level than the former. This behavior caused the formation of additional electrons in the Cu(3)N and MoS(2) layers and the change in optical band gap, which was conducive to the charge separation of electrons in MoS(2) or MoS(2) holes. The prepared Cu(3)N/MoS(2) heterojunction has potential application in various high-performance photoelectric devices, such as photocatalysts and photodetectors.