Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs

In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm(2). The forward voltages (V(F)) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm(2). The size and stru...

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Detalles Bibliográficos
Autores principales: Zhang, Ke, Liu, Yibo, Kwok, Hoi-sing, Liu, Zhaojun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221619/
https://www.ncbi.nlm.nih.gov/pubmed/32268479
http://dx.doi.org/10.3390/nano10040689

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221619/
https://www.ncbi.nlm.nih.gov/pubmed/32268479
http://dx.doi.org/10.3390/nano10040689

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