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Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs
In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm(2). The forward voltages (V(F)) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm(2). The size and stru...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221619/ https://www.ncbi.nlm.nih.gov/pubmed/32268479 http://dx.doi.org/10.3390/nano10040689 |