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Interface-Induced WSe(2) In-plane Homojunction for High-Performance Photodetection

2D transition metal dichalcogenides (TMDCs) have been extensively attractive for nano-electronics and nano-optoelectronics due to their unique properties. Especially, WSe(2), having bipolar carrier transport ability and sizable bandgap, is a promising candidate for future photodetectors. Here, we re...

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Detalles Bibliográficos
Autores principales:	Chi, Jiawei, Guo, Nan, Sun, Yue, Li, Guohua, Xiao, Lin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2020
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7225239/ https://www.ncbi.nlm.nih.gov/pubmed/32410135 http://dx.doi.org/10.1186/s11671-020-03342-9

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