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Purely in-plane ferroelectricity in monolayer SnS at room temperature
2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plan...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7229038/ https://www.ncbi.nlm.nih.gov/pubmed/32415121 http://dx.doi.org/10.1038/s41467-020-16291-9 |
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author | Higashitarumizu, Naoki Kawamoto, Hayami Lee, Chien-Ju Lin, Bo-Han Chu, Fu-Hsien Yonemori, Itsuki Nishimura, Tomonori Wakabayashi, Katsunori Chang, Wen-Hao Nagashio, Kosuke |
author_facet | Higashitarumizu, Naoki Kawamoto, Hayami Lee, Chien-Ju Lin, Bo-Han Chu, Fu-Hsien Yonemori, Itsuki Nishimura, Tomonori Wakabayashi, Katsunori Chang, Wen-Hao Nagashio, Kosuke |
author_sort | Higashitarumizu, Naoki |
collection | PubMed |
description | 2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd–even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics. |
format | Online Article Text |
id | pubmed-7229038 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-72290382020-06-05 Purely in-plane ferroelectricity in monolayer SnS at room temperature Higashitarumizu, Naoki Kawamoto, Hayami Lee, Chien-Ju Lin, Bo-Han Chu, Fu-Hsien Yonemori, Itsuki Nishimura, Tomonori Wakabayashi, Katsunori Chang, Wen-Hao Nagashio, Kosuke Nat Commun Article 2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd–even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics. Nature Publishing Group UK 2020-05-15 /pmc/articles/PMC7229038/ /pubmed/32415121 http://dx.doi.org/10.1038/s41467-020-16291-9 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Higashitarumizu, Naoki Kawamoto, Hayami Lee, Chien-Ju Lin, Bo-Han Chu, Fu-Hsien Yonemori, Itsuki Nishimura, Tomonori Wakabayashi, Katsunori Chang, Wen-Hao Nagashio, Kosuke Purely in-plane ferroelectricity in monolayer SnS at room temperature |
title | Purely in-plane ferroelectricity in monolayer SnS at room temperature |
title_full | Purely in-plane ferroelectricity in monolayer SnS at room temperature |
title_fullStr | Purely in-plane ferroelectricity in monolayer SnS at room temperature |
title_full_unstemmed | Purely in-plane ferroelectricity in monolayer SnS at room temperature |
title_short | Purely in-plane ferroelectricity in monolayer SnS at room temperature |
title_sort | purely in-plane ferroelectricity in monolayer sns at room temperature |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7229038/ https://www.ncbi.nlm.nih.gov/pubmed/32415121 http://dx.doi.org/10.1038/s41467-020-16291-9 |
work_keys_str_mv | AT higashitarumizunaoki purelyinplaneferroelectricityinmonolayersnsatroomtemperature AT kawamotohayami purelyinplaneferroelectricityinmonolayersnsatroomtemperature AT leechienju purelyinplaneferroelectricityinmonolayersnsatroomtemperature AT linbohan purelyinplaneferroelectricityinmonolayersnsatroomtemperature AT chufuhsien purelyinplaneferroelectricityinmonolayersnsatroomtemperature AT yonemoriitsuki purelyinplaneferroelectricityinmonolayersnsatroomtemperature AT nishimuratomonori purelyinplaneferroelectricityinmonolayersnsatroomtemperature AT wakabayashikatsunori purelyinplaneferroelectricityinmonolayersnsatroomtemperature AT changwenhao purelyinplaneferroelectricityinmonolayersnsatroomtemperature AT nagashiokosuke purelyinplaneferroelectricityinmonolayersnsatroomtemperature |