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Silicon Conical Structures by Metal Assisted Chemical Etching

A simple and inexpensive method to obtain Si conical structures is proposed. The method consists of a sequence of steps that include photolithography and metal assisted chemical etching (MACE) to create porous regions that are dissolved in a post-etching process. The proposed process takes advantage...

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Detalles Bibliográficos
Autores principales: Pérez-Díaz, Oscar, Quiroga-González, Enrique
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7231320/
https://www.ncbi.nlm.nih.gov/pubmed/32290505
http://dx.doi.org/10.3390/mi11040402
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author Pérez-Díaz, Oscar
Quiroga-González, Enrique
author_facet Pérez-Díaz, Oscar
Quiroga-González, Enrique
author_sort Pérez-Díaz, Oscar
collection PubMed
description A simple and inexpensive method to obtain Si conical structures is proposed. The method consists of a sequence of steps that include photolithography and metal assisted chemical etching (MACE) to create porous regions that are dissolved in a post-etching process. The proposed process takes advantage of the lateral etching obtained when using catalyst particles smaller than 40 nm for MACE. The final shape of the base of the structures is mainly given by the shape of the lithography mask used for the process. Conical structures ranging from units to hundreds of microns can be produced by this method. The advantage of the method is its simplicity, allowing the production of the structures in a basic chemical lab.
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spelling pubmed-72313202020-05-22 Silicon Conical Structures by Metal Assisted Chemical Etching Pérez-Díaz, Oscar Quiroga-González, Enrique Micromachines (Basel) Article A simple and inexpensive method to obtain Si conical structures is proposed. The method consists of a sequence of steps that include photolithography and metal assisted chemical etching (MACE) to create porous regions that are dissolved in a post-etching process. The proposed process takes advantage of the lateral etching obtained when using catalyst particles smaller than 40 nm for MACE. The final shape of the base of the structures is mainly given by the shape of the lithography mask used for the process. Conical structures ranging from units to hundreds of microns can be produced by this method. The advantage of the method is its simplicity, allowing the production of the structures in a basic chemical lab. MDPI 2020-04-11 /pmc/articles/PMC7231320/ /pubmed/32290505 http://dx.doi.org/10.3390/mi11040402 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Pérez-Díaz, Oscar
Quiroga-González, Enrique
Silicon Conical Structures by Metal Assisted Chemical Etching
title Silicon Conical Structures by Metal Assisted Chemical Etching
title_full Silicon Conical Structures by Metal Assisted Chemical Etching
title_fullStr Silicon Conical Structures by Metal Assisted Chemical Etching
title_full_unstemmed Silicon Conical Structures by Metal Assisted Chemical Etching
title_short Silicon Conical Structures by Metal Assisted Chemical Etching
title_sort silicon conical structures by metal assisted chemical etching
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7231320/
https://www.ncbi.nlm.nih.gov/pubmed/32290505
http://dx.doi.org/10.3390/mi11040402
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