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A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios

Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficult to be compensated by predistortion algorithms....

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Detalles Bibliográficos
Autores principales: Kuchta, Dawid, Gryglewski, Daniel, Wojtasiak, Wojciech
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7231363/
https://www.ncbi.nlm.nih.gov/pubmed/32290236
http://dx.doi.org/10.3390/mi11040398
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author Kuchta, Dawid
Gryglewski, Daniel
Wojtasiak, Wojciech
author_facet Kuchta, Dawid
Gryglewski, Daniel
Wojtasiak, Wojciech
author_sort Kuchta, Dawid
collection PubMed
description Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficult to be compensated by predistortion algorithms. This paper presents a GaN-based power amplifier design with a reduced level of transmittance distortions, varying in time, without significantly worsening other key features such as output power, efficiency and gain. The test amplifier with GaN-on-Si high electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W of output power at the 62% PAE over a 1.0 GHz to 1.1 GHz frequency range. By applying a proposed design approach, it was possible to decrease phase changes on test pulses from 0.5° to 0.2° and amplitude variation from 0.8 dB to 0.2 dB during the pulse width of 40 µs and 40% duty cycle.
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spelling pubmed-72313632020-05-22 A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios Kuchta, Dawid Gryglewski, Daniel Wojtasiak, Wojciech Micromachines (Basel) Article Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficult to be compensated by predistortion algorithms. This paper presents a GaN-based power amplifier design with a reduced level of transmittance distortions, varying in time, without significantly worsening other key features such as output power, efficiency and gain. The test amplifier with GaN-on-Si high electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W of output power at the 62% PAE over a 1.0 GHz to 1.1 GHz frequency range. By applying a proposed design approach, it was possible to decrease phase changes on test pulses from 0.5° to 0.2° and amplitude variation from 0.8 dB to 0.2 dB during the pulse width of 40 µs and 40% duty cycle. MDPI 2020-04-10 /pmc/articles/PMC7231363/ /pubmed/32290236 http://dx.doi.org/10.3390/mi11040398 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Kuchta, Dawid
Gryglewski, Daniel
Wojtasiak, Wojciech
A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
title A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
title_full A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
title_fullStr A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
title_full_unstemmed A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
title_short A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
title_sort gan hemt amplifier design for phased array radars and 5g new radios
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7231363/
https://www.ncbi.nlm.nih.gov/pubmed/32290236
http://dx.doi.org/10.3390/mi11040398
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