High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively...

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Detalles Bibliográficos
Autores principales: Zhang, Yachao, Li, Yifan, Wang, Jia, Shen, Yiming, Du, Lin, Li, Yao, Wang, Zhizhe, Xu, Shengrui, Zhang, Jincheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7239987/
https://www.ncbi.nlm.nih.gov/pubmed/32436019
http://dx.doi.org/10.1186/s11671-020-03345-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7239987/
https://www.ncbi.nlm.nih.gov/pubmed/32436019
http://dx.doi.org/10.1186/s11671-020-03345-6

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