Improvement of Power Conversion Efficiency of Quantum Dot-Sensitized Solar Cells by Doping of Manganese into a ZnS Passivation Layer and Cosensitization of Zinc-Porphyrin on a Modified Graphene Oxide/Nitrogen-Doped TiO(2) Photoanode

[Image: see text] It is vital to acquire power conversion efficiencies comparable to other emerging solar cell technologies by making quantum dot-sensitized solar cells (QDSSCs) competitive. In this study, the effect of graphene oxide (GO), nitrogen, manganese, and a porphyrin compound on the performance of QDSSCs based on a TiO(2)/CdS/ZnS photoanode was investigated. First, adding GO and nitrogen into TiO(2) has a conspicuous impact on the cell efficacy. Both these materials reduce the recombination rate and expand the specific surface area of TiO(2) as well as dye loading, reinforcing cell efficiency value. The maximum power conversion efficiency of QDSSC with a GO N-doped photoelectrode was 2.52%. Second, by employing Mn(2+) (5 and 10 wt %) doping of ZnS, we have succeeded in considerably improving cell performance (from 2.52 to 3.47%). The reason for this could be for the improvement of the passivation layer of ZnS by Mn(2+) ions, bringing about to a smaller recombination of photoinjected electrons with either oxidized dye molecules or electrolyte at the surface of titanium dioxide. However, doping of 15 wt % Mn(2+) had an opposite effect and somewhat declined the cell performance. Finally, a Zn-porphyrin dye was added to the CdS/ZnS by a cosensitization method, widening the light absorption range to the NIR (near-infrared region) (>700 nm), leading to the higher short-circuit current density (J(SC)) and cell efficacy. Utilizing an environmentally safe porphyrin compound into the structure of QDSSC has dramatically enhanced the cell efficacy to 4.62%, which is 40% higher than that of the result obtained from the TiO(2)/CdS/ZnS photoelectrode without porphyrin coating.