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Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics
The thermal excitation, regulation, and detection of charge carriers in solid-state electronics have attracted great attention toward high-performance sensing applications but still face major challenges. Manipulating thermal excitation and transport of charge carriers in nanoheterostructures, we re...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7253168/ https://www.ncbi.nlm.nih.gov/pubmed/32518818 http://dx.doi.org/10.1126/sciadv.aay2671 |
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author | Dinh, T. Nguyen, T. Foisal, A. R. M. Phan, H.-P. Nguyen, T.-K. Nguyen, N.-T. Dao, D. V. |
author_facet | Dinh, T. Nguyen, T. Foisal, A. R. M. Phan, H.-P. Nguyen, T.-K. Nguyen, N.-T. Dao, D. V. |
author_sort | Dinh, T. |
collection | PubMed |
description | The thermal excitation, regulation, and detection of charge carriers in solid-state electronics have attracted great attention toward high-performance sensing applications but still face major challenges. Manipulating thermal excitation and transport of charge carriers in nanoheterostructures, we report a giant temperature sensing effect in semiconductor nanofilms via optoelectronic coupling, termed optothermotronics. A gradient of charge carriers in the nanofilms under nonuniform light illumination is coupled with an electric tuning current to enhance the performance of the thermal sensing effect. As a proof of concept, we used silicon carbide (SiC) nanofilms that form nanoheterostructures on silicon (Si). The sensing performance based on the thermal excitation of charge carriers in SiC is enhanced by at least 100 times through photon excitation, with a giant temperature coefficient of resistance (TCR) of up to −50%/K. Our findings could be used to substantially enhance the thermal sensing performance of solid-state electronics beyond the present sensing technologies. |
format | Online Article Text |
id | pubmed-7253168 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-72531682020-06-08 Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics Dinh, T. Nguyen, T. Foisal, A. R. M. Phan, H.-P. Nguyen, T.-K. Nguyen, N.-T. Dao, D. V. Sci Adv Research Articles The thermal excitation, regulation, and detection of charge carriers in solid-state electronics have attracted great attention toward high-performance sensing applications but still face major challenges. Manipulating thermal excitation and transport of charge carriers in nanoheterostructures, we report a giant temperature sensing effect in semiconductor nanofilms via optoelectronic coupling, termed optothermotronics. A gradient of charge carriers in the nanofilms under nonuniform light illumination is coupled with an electric tuning current to enhance the performance of the thermal sensing effect. As a proof of concept, we used silicon carbide (SiC) nanofilms that form nanoheterostructures on silicon (Si). The sensing performance based on the thermal excitation of charge carriers in SiC is enhanced by at least 100 times through photon excitation, with a giant temperature coefficient of resistance (TCR) of up to −50%/K. Our findings could be used to substantially enhance the thermal sensing performance of solid-state electronics beyond the present sensing technologies. American Association for the Advancement of Science 2020-05-27 /pmc/articles/PMC7253168/ /pubmed/32518818 http://dx.doi.org/10.1126/sciadv.aay2671 Text en Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Dinh, T. Nguyen, T. Foisal, A. R. M. Phan, H.-P. Nguyen, T.-K. Nguyen, N.-T. Dao, D. V. Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics |
title | Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics |
title_full | Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics |
title_fullStr | Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics |
title_full_unstemmed | Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics |
title_short | Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics |
title_sort | optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7253168/ https://www.ncbi.nlm.nih.gov/pubmed/32518818 http://dx.doi.org/10.1126/sciadv.aay2671 |
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