Cargando…

Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

[Image: see text] Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their sma...

Descripción completa

Detalles Bibliográficos
Autores principales: El Abbassi, Maria, Perrin, Mickael L., Barin, Gabriela Borin, Sangtarash, Sara, Overbeck, Jan, Braun, Oliver, Lambert, Colin J., Sun, Qiang, Prechtl, Thorsten, Narita, Akimitsu, Müllen, Klaus, Ruffieux, Pascal, Sadeghi, Hatef, Fasel, Roman, Calame, Michel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7254832/
https://www.ncbi.nlm.nih.gov/pubmed/32223259
http://dx.doi.org/10.1021/acsnano.0c00604
_version_ 1783539622442172416
author El Abbassi, Maria
Perrin, Mickael L.
Barin, Gabriela Borin
Sangtarash, Sara
Overbeck, Jan
Braun, Oliver
Lambert, Colin J.
Sun, Qiang
Prechtl, Thorsten
Narita, Akimitsu
Müllen, Klaus
Ruffieux, Pascal
Sadeghi, Hatef
Fasel, Roman
Calame, Michel
author_facet El Abbassi, Maria
Perrin, Mickael L.
Barin, Gabriela Borin
Sangtarash, Sara
Overbeck, Jan
Braun, Oliver
Lambert, Colin J.
Sun, Qiang
Prechtl, Thorsten
Narita, Akimitsu
Müllen, Klaus
Ruffieux, Pascal
Sadeghi, Hatef
Fasel, Roman
Calame, Michel
author_sort El Abbassi, Maria
collection PubMed
description [Image: see text] Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (<50 nm), and the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned five-atom-wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5 nm nanogap. We demonstrate that these narrow-bandgap 5-AGNRs exhibit metal-like behavior at room temperature and single-electron transistor behavior for temperatures below 150 K. By performing spectroscopy of the molecular levels at 13 K, we obtain addition energies in the range of 200–300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNR is accounted for. By demonstrating the preservation of the 5-AGNRs’ molecular levels upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realization of more exotic GNR-based nanoelectronic devices.
format Online
Article
Text
id pubmed-7254832
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-72548322020-05-29 Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors El Abbassi, Maria Perrin, Mickael L. Barin, Gabriela Borin Sangtarash, Sara Overbeck, Jan Braun, Oliver Lambert, Colin J. Sun, Qiang Prechtl, Thorsten Narita, Akimitsu Müllen, Klaus Ruffieux, Pascal Sadeghi, Hatef Fasel, Roman Calame, Michel ACS Nano [Image: see text] Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (<50 nm), and the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned five-atom-wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5 nm nanogap. We demonstrate that these narrow-bandgap 5-AGNRs exhibit metal-like behavior at room temperature and single-electron transistor behavior for temperatures below 150 K. By performing spectroscopy of the molecular levels at 13 K, we obtain addition energies in the range of 200–300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNR is accounted for. By demonstrating the preservation of the 5-AGNRs’ molecular levels upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realization of more exotic GNR-based nanoelectronic devices. American Chemical Society 2020-03-30 2020-05-26 /pmc/articles/PMC7254832/ /pubmed/32223259 http://dx.doi.org/10.1021/acsnano.0c00604 Text en Copyright © 2020 American Chemical Society This is an open access article published under a Creative Commons Non-Commercial No Derivative Works (CC-BY-NC-ND) Attribution License (http://pubs.acs.org/page/policy/authorchoice_ccbyncnd_termsofuse.html) , which permits copying and redistribution of the article, and creation of adaptations, all for non-commercial purposes.
spellingShingle El Abbassi, Maria
Perrin, Mickael L.
Barin, Gabriela Borin
Sangtarash, Sara
Overbeck, Jan
Braun, Oliver
Lambert, Colin J.
Sun, Qiang
Prechtl, Thorsten
Narita, Akimitsu
Müllen, Klaus
Ruffieux, Pascal
Sadeghi, Hatef
Fasel, Roman
Calame, Michel
Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors
title Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors
title_full Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors
title_fullStr Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors
title_full_unstemmed Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors
title_short Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors
title_sort controlled quantum dot formation in atomically engineered graphene nanoribbon field-effect transistors
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7254832/
https://www.ncbi.nlm.nih.gov/pubmed/32223259
http://dx.doi.org/10.1021/acsnano.0c00604
work_keys_str_mv AT elabbassimaria controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT perrinmickaell controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT baringabrielaborin controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT sangtarashsara controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT overbeckjan controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT braunoliver controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT lambertcolinj controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT sunqiang controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT prechtlthorsten controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT naritaakimitsu controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT mullenklaus controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT ruffieuxpascal controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT sadeghihatef controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT faselroman controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors
AT calamemichel controlledquantumdotformationinatomicallyengineeredgraphenenanoribbonfieldeffecttransistors