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Low temperature SiC die-attach bonding technology by hillocks generation on Al sheet surface with stress self-generation and self-release
This paper introduced an approach of die-attach bonding technology based on a low-cost high-purity aluminum (99.99%) sheet in a silicon carbide (SiC)/direct bonded aluminum (DBA) power module. Both sides of an Al sheet were sputtered by a thin Ti and Ag layer, which generated a tensile stress of 166...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7270210/ https://www.ncbi.nlm.nih.gov/pubmed/32494058 http://dx.doi.org/10.1038/s41598-020-66069-8 |