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Band Structure and Intersubband Transitions of Three-Layer Semiconductor Nanoplatelets

This paper presents the first general theory of electronic band structure and intersubband transitions in three-layer semiconductor nanoplatelets. We find a dispersion relation and wave functions of the confined electrons and use them to analyze the band structure of core/shell nanoplatelets with eq...

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Detalles Bibliográficos
Autores principales: Vovk, Ilia A., Lobanov, Vladimir V., Litvin, Aleksandr P., Leonov, Mikhail Yu., Fedorov, Anatoly V., Rukhlenko, Ivan D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7279220/
https://www.ncbi.nlm.nih.gov/pubmed/32408535
http://dx.doi.org/10.3390/nano10050933
Descripción
Sumario:This paper presents the first general theory of electronic band structure and intersubband transitions in three-layer semiconductor nanoplatelets. We find a dispersion relation and wave functions of the confined electrons and use them to analyze the band structure of core/shell nanoplatelets with equal thicknesses of the shell layers. It is shown that the energies of electrons localized inside the shell layers can be degenerate for certain electron wave vectors and certain core and shell thicknesses. We also show that the energies of intersubband transitions can be nonmonotonic functions of the core and shell thicknesses, exhibiting pronounced local minima and maxima which can be observed in the infrared absorption spectra. Our results will prove useful for the design of photonic devices based on multilayered semiconductor nanoplatelets operating at infrared frequencies.