Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO(2)/Al(2)O(3) Superlattice on Transparent ITO/Glass Substrate

Threshold voltage adjustment in threshold switching (TS) devices with HfO(2)/Al(2)O(3) superlattice (by means of changing the cycle ratio of HfO(2) to Al(2)O(3) in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices with different cycle ratios (i.e., 3:1...

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Detalles Bibliográficos
Autores principales: Choi, Yejoo, Shin, Jaemin, Moon, Seungjun, Shin, Changhwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281191/
https://www.ncbi.nlm.nih.gov/pubmed/32455725
http://dx.doi.org/10.3390/mi11050525

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281191/
https://www.ncbi.nlm.nih.gov/pubmed/32455725
http://dx.doi.org/10.3390/mi11050525

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