Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...

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Detalles Bibliográficos
Autores principales: Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ing, Ng Geok, Nitta, Shugo, Kennedy, John, Amano, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281217/
https://www.ncbi.nlm.nih.gov/pubmed/32443764
http://dx.doi.org/10.3390/mi11050519

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281217/
https://www.ncbi.nlm.nih.gov/pubmed/32443764
http://dx.doi.org/10.3390/mi11050519

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