Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array

We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were t...

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Detalles Bibliográficos
Autores principales: Kim, Hyun Jae, Han, Chul Jong, Yoo, Byungwook, Lee, Jeongno, Lee, Kimoon, Lee, Kyu Hyoung, Oh, Min Suk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281425/
https://www.ncbi.nlm.nih.gov/pubmed/32443447
http://dx.doi.org/10.3390/mi11050508

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281425/
https://www.ncbi.nlm.nih.gov/pubmed/32443447
http://dx.doi.org/10.3390/mi11050508

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