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Binary Addition in Resistance Switching Memory Array by Sensing Majority

The flow of data between processing and memory units in contemporary computing systems is their main performance and energy-efficiency bottleneck, often referred to as the ‘von Neumann bottleneck’ or ‘memory wall’. Emerging resistance switching memories (memristors) show promising signs to overcome...

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Detalles Bibliográficos
Autor principal: Reuben, John
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281612/
https://www.ncbi.nlm.nih.gov/pubmed/32423171
http://dx.doi.org/10.3390/mi11050496
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author Reuben, John
author_facet Reuben, John
author_sort Reuben, John
collection PubMed
description The flow of data between processing and memory units in contemporary computing systems is their main performance and energy-efficiency bottleneck, often referred to as the ‘von Neumann bottleneck’ or ‘memory wall’. Emerging resistance switching memories (memristors) show promising signs to overcome the ‘memory wall’ by enabling computation in the memory array. Majority logic is a type of Boolean logic, and in many nanotechnologies, it has been found to be an efficient logic primitive. In this paper, a technique is proposed to implement a majority gate in a memory array. The majority gate is realised in an energy-efficient manner as a memory [Formula: see text] operation. The proposed logic family disintegrates arithmetic operations to majority and NOT operations which are implemented as memory [Formula: see text] and [Formula: see text] operations. A 1-bit full adder can be implemented in 6 steps (memory cycles) in a 1T–1R array, which is faster than [Formula: see text] , [Formula: see text] , [Formula: see text] and other similar logic primitives.
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spelling pubmed-72816122020-06-17 Binary Addition in Resistance Switching Memory Array by Sensing Majority Reuben, John Micromachines (Basel) Article The flow of data between processing and memory units in contemporary computing systems is their main performance and energy-efficiency bottleneck, often referred to as the ‘von Neumann bottleneck’ or ‘memory wall’. Emerging resistance switching memories (memristors) show promising signs to overcome the ‘memory wall’ by enabling computation in the memory array. Majority logic is a type of Boolean logic, and in many nanotechnologies, it has been found to be an efficient logic primitive. In this paper, a technique is proposed to implement a majority gate in a memory array. The majority gate is realised in an energy-efficient manner as a memory [Formula: see text] operation. The proposed logic family disintegrates arithmetic operations to majority and NOT operations which are implemented as memory [Formula: see text] and [Formula: see text] operations. A 1-bit full adder can be implemented in 6 steps (memory cycles) in a 1T–1R array, which is faster than [Formula: see text] , [Formula: see text] , [Formula: see text] and other similar logic primitives. MDPI 2020-05-14 /pmc/articles/PMC7281612/ /pubmed/32423171 http://dx.doi.org/10.3390/mi11050496 Text en © 2020 by the author. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Reuben, John
Binary Addition in Resistance Switching Memory Array by Sensing Majority
title Binary Addition in Resistance Switching Memory Array by Sensing Majority
title_full Binary Addition in Resistance Switching Memory Array by Sensing Majority
title_fullStr Binary Addition in Resistance Switching Memory Array by Sensing Majority
title_full_unstemmed Binary Addition in Resistance Switching Memory Array by Sensing Majority
title_short Binary Addition in Resistance Switching Memory Array by Sensing Majority
title_sort binary addition in resistance switching memory array by sensing majority
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281612/
https://www.ncbi.nlm.nih.gov/pubmed/32423171
http://dx.doi.org/10.3390/mi11050496
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