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Effect of 808 nm Semiconductor Laser on the Stability of Orthodontic Micro-Implants: A Split-Mouth Study

Background: To evaluate the effect of photobiomodulation (PBM) on orthodontic micro-implants (n = 44; 14 women, 8 men). Methods: PBM with 808 nm diode laser was applied immediately, 3, 6, 9, 12, 15, and 30 days post the implantation. Results were assessed within same time frames and additionally aft...

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Autores principales: Matys, Jacek, Flieger, Rafał, Gedrange, Tomasz, Janowicz, Krzysztof, Kempisty, Bartosz, Grzech-Leśniak, Kinga, Dominiak, Marzena
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287787/
https://www.ncbi.nlm.nih.gov/pubmed/32423127
http://dx.doi.org/10.3390/ma13102265
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author Matys, Jacek
Flieger, Rafał
Gedrange, Tomasz
Janowicz, Krzysztof
Kempisty, Bartosz
Grzech-Leśniak, Kinga
Dominiak, Marzena
author_facet Matys, Jacek
Flieger, Rafał
Gedrange, Tomasz
Janowicz, Krzysztof
Kempisty, Bartosz
Grzech-Leśniak, Kinga
Dominiak, Marzena
author_sort Matys, Jacek
collection PubMed
description Background: To evaluate the effect of photobiomodulation (PBM) on orthodontic micro-implants (n = 44; 14 women, 8 men). Methods: PBM with 808 nm diode laser was applied immediately, 3, 6, 9, 12, 15, and 30 days post the implantation. Results were assessed within same time frames and additionally after 60 days to check for implants stability using the Periotest device. Patients pain experiences following the first day post-treatment and potential loss of micro-implants after 60 days were recorded. The procedure involved insertion of mini-implants in the maxilla for the laser group (L, n = 22) and negative control group (C, n = 22). Irradiation was carried buccally and palatally with respect to the maxillary ridge (2 points). The energy per point was 4 J (8 J/cm(2)), total dose was 56 J. Results: Patients did not report significant differences in terms of pain experiences comparing the L and C groups (p = 0.499). At 30 days post-treatment, higher secondary stability of implants was observed in the laser group (Periotest Test Value, PTV 6.32 ± 3.62), in contrast to the controls (PTV 11.34 ± 5.76) (p = 0.004). At 60 days post-treatment, significantly higher stability was recorded in the laser group (PTV 6.55 ± 4.66) compared with the controls, PTV (10.95 ± 4.77) (p = 0.009). Conclusions: Application of the 808 nm diode laser increased secondary micro-implant stability.
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spelling pubmed-72877872020-06-15 Effect of 808 nm Semiconductor Laser on the Stability of Orthodontic Micro-Implants: A Split-Mouth Study Matys, Jacek Flieger, Rafał Gedrange, Tomasz Janowicz, Krzysztof Kempisty, Bartosz Grzech-Leśniak, Kinga Dominiak, Marzena Materials (Basel) Article Background: To evaluate the effect of photobiomodulation (PBM) on orthodontic micro-implants (n = 44; 14 women, 8 men). Methods: PBM with 808 nm diode laser was applied immediately, 3, 6, 9, 12, 15, and 30 days post the implantation. Results were assessed within same time frames and additionally after 60 days to check for implants stability using the Periotest device. Patients pain experiences following the first day post-treatment and potential loss of micro-implants after 60 days were recorded. The procedure involved insertion of mini-implants in the maxilla for the laser group (L, n = 22) and negative control group (C, n = 22). Irradiation was carried buccally and palatally with respect to the maxillary ridge (2 points). The energy per point was 4 J (8 J/cm(2)), total dose was 56 J. Results: Patients did not report significant differences in terms of pain experiences comparing the L and C groups (p = 0.499). At 30 days post-treatment, higher secondary stability of implants was observed in the laser group (Periotest Test Value, PTV 6.32 ± 3.62), in contrast to the controls (PTV 11.34 ± 5.76) (p = 0.004). At 60 days post-treatment, significantly higher stability was recorded in the laser group (PTV 6.55 ± 4.66) compared with the controls, PTV (10.95 ± 4.77) (p = 0.009). Conclusions: Application of the 808 nm diode laser increased secondary micro-implant stability. MDPI 2020-05-14 /pmc/articles/PMC7287787/ /pubmed/32423127 http://dx.doi.org/10.3390/ma13102265 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Matys, Jacek
Flieger, Rafał
Gedrange, Tomasz
Janowicz, Krzysztof
Kempisty, Bartosz
Grzech-Leśniak, Kinga
Dominiak, Marzena
Effect of 808 nm Semiconductor Laser on the Stability of Orthodontic Micro-Implants: A Split-Mouth Study
title Effect of 808 nm Semiconductor Laser on the Stability of Orthodontic Micro-Implants: A Split-Mouth Study
title_full Effect of 808 nm Semiconductor Laser on the Stability of Orthodontic Micro-Implants: A Split-Mouth Study
title_fullStr Effect of 808 nm Semiconductor Laser on the Stability of Orthodontic Micro-Implants: A Split-Mouth Study
title_full_unstemmed Effect of 808 nm Semiconductor Laser on the Stability of Orthodontic Micro-Implants: A Split-Mouth Study
title_short Effect of 808 nm Semiconductor Laser on the Stability of Orthodontic Micro-Implants: A Split-Mouth Study
title_sort effect of 808 nm semiconductor laser on the stability of orthodontic micro-implants: a split-mouth study
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287787/
https://www.ncbi.nlm.nih.gov/pubmed/32423127
http://dx.doi.org/10.3390/ma13102265
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