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Analysis of Surface Current by Quantum Tunneling Effect of Thin Film Transistors with Topological Insulators

Dirac insulator and Weyl conductors have different semiconductor structures. A Dirac insulator is a SiOC insulated thin film, and a Weyl conductor consists of transistors with different semiconductor structures combining channels with SiOC insulated films. The transfer characteristics of transistors...

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Autor principal: Oh, Teresa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7289792/
https://www.ncbi.nlm.nih.gov/pubmed/32528017
http://dx.doi.org/10.1038/s41598-020-66499-4
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author Oh, Teresa
author_facet Oh, Teresa
author_sort Oh, Teresa
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description Dirac insulator and Weyl conductors have different semiconductor structures. A Dirac insulator is a SiOC insulated thin film, and a Weyl conductor consists of transistors with different semiconductor structures combining channels with SiOC insulated films. The transfer characteristics of transistors were investigated in this study. The difference between Dirac insulators and Weyl conductors is the same as the difference between transistors without channels and transistors with channels. Transistors without channels exhibit bidirectional transmission characteristics due to the spin currents of the Dirac insulators. By contrast, transistors with channels display unidirectional transmission characteristics consistent with the movement of the charges in the channels. This unidirectional transmission characteristic results in an existence of the threshold voltage and leakage current.
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spelling pubmed-72897922020-06-15 Analysis of Surface Current by Quantum Tunneling Effect of Thin Film Transistors with Topological Insulators Oh, Teresa Sci Rep Article Dirac insulator and Weyl conductors have different semiconductor structures. A Dirac insulator is a SiOC insulated thin film, and a Weyl conductor consists of transistors with different semiconductor structures combining channels with SiOC insulated films. The transfer characteristics of transistors were investigated in this study. The difference between Dirac insulators and Weyl conductors is the same as the difference between transistors without channels and transistors with channels. Transistors without channels exhibit bidirectional transmission characteristics due to the spin currents of the Dirac insulators. By contrast, transistors with channels display unidirectional transmission characteristics consistent with the movement of the charges in the channels. This unidirectional transmission characteristic results in an existence of the threshold voltage and leakage current. Nature Publishing Group UK 2020-06-11 /pmc/articles/PMC7289792/ /pubmed/32528017 http://dx.doi.org/10.1038/s41598-020-66499-4 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Oh, Teresa
Analysis of Surface Current by Quantum Tunneling Effect of Thin Film Transistors with Topological Insulators
title Analysis of Surface Current by Quantum Tunneling Effect of Thin Film Transistors with Topological Insulators
title_full Analysis of Surface Current by Quantum Tunneling Effect of Thin Film Transistors with Topological Insulators
title_fullStr Analysis of Surface Current by Quantum Tunneling Effect of Thin Film Transistors with Topological Insulators
title_full_unstemmed Analysis of Surface Current by Quantum Tunneling Effect of Thin Film Transistors with Topological Insulators
title_short Analysis of Surface Current by Quantum Tunneling Effect of Thin Film Transistors with Topological Insulators
title_sort analysis of surface current by quantum tunneling effect of thin film transistors with topological insulators
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7289792/
https://www.ncbi.nlm.nih.gov/pubmed/32528017
http://dx.doi.org/10.1038/s41598-020-66499-4
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