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Tunable resistivity exponents in the metallic phase of epitaxial nickelates

We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO(3) as a function of epitaxial strain. Thin films under low strain conditions show a linear dependence of the resistivity versus temperature, consistent with a classical Fermi gas ruled by electron-phonon inte...

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Detalles Bibliográficos
Autores principales: Guo, Qikai, Farokhipoor, Saeedeh, Magén, César, Rivadulla, Francisco, Noheda, Beatriz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7289814/
https://www.ncbi.nlm.nih.gov/pubmed/32527995
http://dx.doi.org/10.1038/s41467-020-16740-5
Descripción
Sumario:We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO(3) as a function of epitaxial strain. Thin films under low strain conditions show a linear dependence of the resistivity versus temperature, consistent with a classical Fermi gas ruled by electron-phonon interactions. In addition, the apparent temperature exponent, n, can be tuned with the epitaxial strain between n = 1 and n = 3. We discuss the critical role played by quenched random disorder in the value of n. Our work shows that the assignment of Fermi/Non-Fermi liquid behaviour based on experimentally obtained resistivity exponents requires an in-depth analysis of the degree of disorder in the material.